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EPC2023 - Power Transistor

Features

  • VDS, 30 V.
  • Maximum RDS(ON), 1.3 mΩ.
  • ID, 60 A.
  • Pb-Free (RoHS Compliant), Halogen Free.

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Datasheet preview – EPC2023

Datasheet Details

Part number EPC2023
Manufacturer EPC
File Size 488.85 KB
Description Power Transistor
Datasheet download datasheet EPC2023 Datasheet
Additional preview pages of the EPC2023 datasheet.

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Full PDF Text Transcription

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EPC2023 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 30 V • Maximum RDS(ON), 1.3 mΩ • ID, 60 A • Pb-Free (RoHS Compliant), Halogen Free Applications: • High Frequency DC-DC Conversion • Motor Drive • Industrial Automation • Synchronous Rectification • Inrush Protection • Point-of-Load (POL) Converters EPC2023 eGaN® FETs are supplied only in passivated die form with solder bars Die Size: 6.05 mm x 2.3 mm MAXIMUM RATINGS Parameter VDS (Maximum Drain – Source Voltage) VGS (Gate – Source Maximum Voltage Range) ID Continuous Drain Current, 25 °C, θJA = 13.
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