EPC2049
Features
:
- VDS, 40 V
- Maximum RDS(on), 5 mΩ
- ID, 16 A Applications:
- Point of Load Converters
- Envelope Tracking Power Supplies
- Li DAR/Pulsed Power Applications
- Class D Audio
- Low Inductance Motor Drive
EPC2049 e Ga N® FETs are supplied in passivated die form with solder bumps.
Die Size: 2.5 mm x 1.5 mm
Maximum Ratings
Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5ms pulses at 150˚C) 48
Continuous (TA = 25˚C, RθJA= 8 ˚C/W)
Pulsed (25˚C, TPULSE = 300 µs)
Gate-to-Source Voltage
Gate-to-Source Voltage
-4
Operating Temperature
TSTG Storage Temperature
-40 to 150 -40 to 150 ˚C
Static Characteristics (TJ= 25˚C unless otherwise stated)
PARAMETER
TEST CONDITIONS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 0.5 m...
