EPC EPC2045
Enhancement Mode Power Transistor
| Part No. | EPC2045 |
|---|---|
| Datasheet | EPC2045 Download |
| Manufacturer |  EPC |
| Description | Enhancement Mode Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 100 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120 V Continuous (TA = 25°C) ID Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature 16 A 130 6 V -4 -40 to 150 °C -40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 1.4 RθJB Thermal Resistance, Junction-to-Board 8.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 64 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. EPC2045 eGaN® FETs are supplied passivated die form with solder bumps Die size: 2.5 mm x 1.5 mmAPPLICATIONS
● Open Rack Server Architectures● Lidar/Pulsed Power
APPLICATIONS
● USB-C● Isolated Power Supplies
● Point of Load Converters
● Class D Audio
● LED Lighting
● Low Inductance Motor Drive Benefits
● Ultra H...
