EPC EPC2049
Power Transistor
| Part No. | EPC2049 |
|---|---|
| Datasheet | EPC2049 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
:● VDS, 40 V
● Maximum RDS(on), 5 mΩ
● ID, 16 A
APPLICATIONS
:● Point of Load Converters
● Envelope Tracking Power Supplies
● LiDAR/Pulsed Power
APPLICATIONS
● Class D Audio● Low Inductance Motor Drive EPC2049 eGaN® FETs are supplied in passivated die form with solder bumps. Die Size: 2.5 mm x 1.5 mm
MAXIMUM RATINGS
VDS Drain-to-Source Voltage (Continuous) 40 V Drain-to-Source Voltage (up to 10,000 5ms pulses at 150˚C) 48 ID Continuous (TA = 25˚C, RθJA= 8 ˚C/W) Pulsed (25˚C, TPULSE = 300 µs) 16 175 A VGS Gate-to-Source Voltage Gate-to-Source Voltage 6 -4 V TJ Operating Temperature TSTG Storage Temperature -40 to 150 -40 to 150 ˚C Static Characteristics (TJ= 25˚C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.5 mA 40 IDSS Drain Source Leakage VDS = 32 V, VGS = 0 V 0.1 Gate-to-Source Forward Leakage VGS = 5 V 0.5 IGSS Gate-to-Source Reverse Leakage VGS = -4 V 0.1 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 6 mA 0.8...
