EPC EPC2040
Power Transistor
| Part No. | EPC2040 |
|---|---|
| Datasheet | EPC2040 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 15 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 18 V ID Continuous (TA = 25°C, RθJA = 220°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage 3.4 A 28 6 V –4 TJ Operating Temperature TSTG Storage Temperature –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 5.7 RθJB Thermal Resistance, Junction-to-Board 39 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 97 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details PARAMETER Static Characteristics (TJ= 25°C unless otherwise stated) TEST CONDITIONS BVDSS IDSS Drain-to-Source Voltage Drain-Source Leakage VGS = 0 V, ID = 300 µA VDS = 12 V, VGS = 0 V IGSS VGS(TH) RDS(on) Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Threshold Voltage Drain-Source...
