EPC2115 Description
The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA package. The EPC2115 enables designers to improve efficiency, save space, and lower costs pared to silicon-based solutions. The ultra-low capacitance and zero reverse recovery of the eGaN FETs enable efficient...
EPC2115 Key Features
- Integrated Gate Driver
- Low Propagation Delay
- Up to 7 MHz Operation
- Operates from 5 V Supply
- Dual 88-mΩ, 150-V eGaN FET
- Low Inductance 2.9 mm x 1.1 mm BGA