Datasheet Details
| Part number | EPC2115 |
|---|---|
| Manufacturer | EPC |
| File Size | 734.78 KB |
| Description | Integrated Gate Driver eGaN |
| Datasheet |
 EPC2115 Datasheet
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General Description
The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA package.
Key Features
- Integrated Gate Driver.
- Low Propagation Delay.
- Up to 7 MHz Operation.
- Operates from 5 V Supply.
- Dual 88-mΩ, 150-V eGaN FET.
- Low Inductance 2.9 mm x 1.1 mm BGA EPC2115 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm.