EPC2115 - Integrated Gate Driver eGaN

EPC

EPC2115 Datasheet Preview — Preview of EPC2115 PDF

Datasheet Details

Part number	EPC2115
Manufacturer	EPC
File Size	734.78 KB
Description	Integrated Gate Driver eGaN
Datasheet	EPC2115-EPC.pdf

EPC2115 Product details

Description

The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA package.

Features

Integrated Gate Driver.
Low Propagation Delay.
Up to 7 MHz Operation.
Operates from 5 V Supply.
Dual 88-mΩ, 150-V eGaN FET.
Low Inductance 2.9 mm x 1.1 mm BGA EPC2115 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm.

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Published: May 27, 2019 |