F50L2G41LB-104YG2M memory equivalent, 3.3v 2 gbit (2 x 1 gbit) spi-nand flash memory.
* Voltage Supply: 3.3V (2.7V~3.6V)
* Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - Pa.
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