* Voltage Supply: 3.3V (2.7V~3.6V)
* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
* Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell
F50L2G41LB-104YG2ME Datasheet (1.32 MB)
F50L2G41LB-104YG2ME
ESMT
1.32 MB
3.3v 2 gbit (2 x 1 gbit) spi-nand flash memory.
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim.
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