M12L64164A-6BG2M Key Features
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave) y All inputs are sampled at the positive going edge of the system clock y DQM for m
- 15.6 μ s refresh interval
- Part: M12L64164A-6BG2M
- Description: 1M x 16 Bit x 4 Banks Synchronous DRAM
- Manufacturer: Elite Semiconductor Microelectronics Technology
- Size: 1.22 MB
Related Elite Semiconductor Microelectronics Technology Datasheets
| Part Number | Description |
|---|---|
| M12L64164A-6BG2C | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-6BG2Y | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-6TG2C | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-6TG2M | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L64164A-6TG2Y | 1M x 16 Bit x 4 Banks Synchronous DRAM |