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M15T1G1664A-DEBG2CS - 8M x 16 Bit x 8 Banks DDR3 SDRAM

Download the M15T1G1664A-DEBG2CS datasheet PDF. This datasheet also covers the M15T1G1664A variant, as both devices belong to the same 8m x 16 bit x 8 banks ddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (M15T1G1664A-ESMT.pdf) that lists specifications for multiple related part numbers.

General Description

The 1Gb Double-Data-Rate-3(L), DDR3(L) DRAM is double data rate architecture to achieve high-speed operation.

It is internally configured as an eight bank DRAM.

The 1Gb chip is organized as 8Mbit x 16 I/Os x 8 bank devices.

Overview

ESMT M15T1G1664A (2C) DDR3(L) SDRAM Feature  Interface and Power Supply  SSTL_135: VDD/VDDQ = 1.35V(-0.067V/+0.1V)  SSTL_15: VDD/VDDQ = 1.5V(±0.075V)  JEDEC DDR3(L) Compliant  8n Prefetch Architecture  Differential Clock (CK/ CK ) and Data Strobe (DQS/ DQS )  Double-data rate on DQs, DQS and DM  Data Integrity  Auto Refresh and Self Refresh Modes  Power Saving Mode  Partial Array Self Refresh(PASR)  Power Down Mode  Signal Integrity  Configurable DS for system compatibility  Configurable On-Die Termination  ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%) 8M x 16 Bit x 8 Banks DDR3(L) SDRAM  Signal Synchronization  Write Leveling via MR settings  Read Leveling via MPR  Programmable Functions  CAS Latency (5/6/7/8/9/10/11/12/13)  CAS Write Latency (5/6/7/8/9)  Additive Latency (0/CL-1/CL-2)  Write Recovery Time (5/6/7/8/10/12/14/16)  Burst Type (Sequential/Interleaved)  Burst Length (BL8/BC4/BC4 or 8 on the fly)  Self Refresh Temperature Range(Normal/Extended)  Output Driver Impedance (34/40)  On-Die Termination of Rtt_Nom(20/30/40/60/120)  On-Die Termination of Rtt_WR(60/120)  Precharge Power Down (slow/fast) Ordering Information Product ID Max Freq.

VDD Data Rate (CL-tRCD-tRP) Package Comments M15T1G1664A–BDBG2C M15T1G1664A–DEBG2C 800MHz 933MHz 1.35V/1.5V DDR3(L)-1600 (11-11-11) 96 ball BGA 1.35V/1.5V DDR3(L)-1866 (13-13-13) (7.5mmx13.5mm) Pb-free Pb-free M15T1G1664A–BDBG2CS M15T1G1664A–DEBG2CS 800MHz 933MHz 1.35V/1.5V DDR3(L)-1600 (11-11-11) 96 ball BGA 1.35V/1.5V DDR3(L)-1866 (13-13-13) (7.5mmx13mm) Pb-free Pb-free Elite Semiconductor Microelectronics Technology Inc Publication Date : Jul.

2021 Revision : 1.

Key Features

  • and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a differential DQS pair in a source synchronous fashion. These devices operate with a single 1.35V -0.067V/+0.1V or 1.5V ± 0.075V power supply and are available in BGA packages. DDR3(L) SDRAM Addressing Configuration M15T1G1664A # of Bank 8 Bank Address BA0.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M15T1G1664A-DEBG2C 8M x 16 Bit x 8 Banks DDR3 SDRAM
M15T1G1664A-DEBG2S 8M x 16 Bit x 8 Banks DDR3 SDRAM
M15T1G1664A-DEBG2T 8M x 16 Bit x 8 Banks DDR3 SDRAM
M15T1G1664A-BDBG2C 8M x 16 Bit x 8 Banks DDR3 SDRAM
M15T1G1664A-BDBG2CS 8M x 16 Bit x 8 Banks DDR3 SDRAM
M15T1G1664A-EFBG2S 8M x 16 Bit x 8 Banks DDR3 SDRAM
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M15T1G1664A 8M x 16 Bit x 8 Banks DDR3 SDRAM
M15T1G8128A DDR3 SDRAM
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