• Part: M15T1G1664A-DEBG2S
  • Description: 8M x 16 Bit x 8 Banks DDR3 SDRAM
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 7.25 MB
Download M15T1G1664A-DEBG2S Datasheet PDF
Elite Semiconductor Microelectronics Technology
M15T1G1664A-DEBG2S
M15T1G1664A-DEBG2S is 8M x 16 Bit x 8 Banks DDR3 SDRAM manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the M15T1G1664A-EFBG2S comparator family.
ESMT DDR3(L) SDRAM Feature - Interface and Power Supply ˗ SSTL_135: VDD/VDDQ = 1.35V(-0.067V/+0.1V) ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V) - JEDEC DDR3(L) pliant ˗ 8n Prefetch Architecture ˗ Differential Clock (CK/ CK ) and Data Strobe (DQS/ DQS ) ˗ Double-data rate on DQs, DQS and DM - Data Integrity ˗ Auto Refresh and Self Refresh Modes - Power Saving Mode ˗ Partial Array Self Refresh(PASR) ˗ Power Down Mode - Signal Integrity ˗ Configurable DS for system patibility ˗ Configurable On-Die Termination ˗ ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%) M15T1G1664A (2S) 8M x 16 Bit x 8 Banks DDR3(L) SDRAM - Signal Synchronization ˗ Write Leveling via MR...