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2N5162 - PNP silicon RF power transistors

Download the 2N5162 datasheet PDF (2N5161 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for pnp silicon rf power transistors.

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Note: The manufacturer provides a single datasheet file (2N5161-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5162
Manufacturer Unknown Manufacturer
File Size 236.14 KB
Description PNP silicon RF power transistors
Datasheet download datasheet 2N5162 Datasheet

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Full PDF Text Transcription

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2N5161 (SILICON) 2N5162 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR CASE 36 (TO-60) Case common to emitter PNP silicon RF power transistors designed for amplifier or oscillator applications in military and industrial equipment. Suitable for use as Class B or C output or power oscillator in VHF applications MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation@ TC =25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC PD TJ , Tstg 2NS161 2NS162 40 60 4.0 1.5 5.0 20 0.114 50 0.286 -65 to +200 Unit Vdc Vdc Vdc Adc Watts W;OC °c FIGURE 1 - 175 MHz TEST CIRCUITS !-28 V 2400 pF 3.0pF-~pF~ 1. - 2N5161 L3 0.02PF! Ll L2 rv' ~ L4 ,." 1.
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