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2N5718 - SILICON LOW NOISE N-CHANNEL JUNCTION FET

This page provides the datasheet information for the 2N5718, a member of the 2N5716 SILICON LOW NOISE N-CHANNEL JUNCTION FET family.

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Datasheet Details

Part number 2N5718
Manufacturer ETC
File Size 220.87 KB
Description SILICON LOW NOISE N-CHANNEL JUNCTION FET
Datasheet download datasheet 2N5718 Datasheet
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Full PDF Text Transcription

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2N5716 (SILICON) 2N5717 2N5718 SILICON LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode Junction Field·Effect Transistors designed for audio amplifiers in low·power or battery operated applications. • Low Zero- Gate-Voltage Drain Current @ VDS = 15 Vdc IDSS= 5O/lAdc to 250 /lAde - 2N5716 200 /lAde to 1.0 mAde - 2N5717 800 /lAde to 4.0 mAde - 2N 5718 I• High Forward Transadmittance @ VDS = 15 Vdc, f = 1.0 kHz Vls= 350 /lmhos (Typ) @ ID = 50 /lAde - 2N5716 550/lmhos (Typ) @ ID = 200/lAdc - 2N5717 900/lmhos (Typ) @ ID = 800 /lAde - 2N5718 • Low Noise Voltage - en = 75 nVIj""HZ (Max) @ f = 1.0 kHz • Drain and Source Interchangeable LOW NOISE N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS en = 75 nV/.
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