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2N6370 Datasheet Preview

2N6370 Datasheet

NPN SILICON RF POWER TRANSISTOR

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2N6370 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
designed primarily as a driver for high'power linear amplifier
stages operating from 2.0 to 30 MHz with a 28·Volt supply.
• Power Output @ 28 Vdc, 30 MHz -
10 W (PEP)
• Intermodulation Distortion at Rated Power Output-
IMD ~ -30 dB (Max)
10 W (PEP) - 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
"MAXIMUM RATINGS
Ratina
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device DissipatIOn @TC""250C
Derate above 25°C
Storage Temperature Range
* Indicates JEDEC Registered Data
Symbol
VeEO
VCRn
VEBO
Ie
Po
Tstg
Value
35
65
4.0
1.5
20
0.114
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watts
wf'e
°e
TYPICAL DRIVER APPLICATION
05 W(PEP)
+---__ '50W(PEP)
Q
fb~ETB~
__\~A rTl
SEATING PLANE
MILLIMETERS INCHES
DIM MI. MAX MI. MAX
A 24.54
8 9.47
C 6.07
D 5.59
E 2.16
F 010
G 18.29
H 21.59
J 3.12
K 10.80
L 6.22
M 40'
3.81
n 2.97
24.89
9.73
7.14
584
2.67
0.15
18.54
22.10
3.23
11.05
6.48
50'
4.57
3.12
0.970
0.373
0.239
0.220
0.085
0.004
0.70
0.850
0.123
0.425
0.245
40'
0.150
0.117
0.980
0.383
0.281
0.230
0.105
0.006
0.730
0.870
0.127
0.435
0.255
50'
0.180
0.123
CASE 211-01
2-579




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2N6370 Datasheet Preview

2N6370 Datasheet

NPN SILICON RF POWER TRANSISTOR

No Preview Available !

2N6370 (continued)
*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise notedl
Characteristics
I Symbol
OFF CHARACTERISTICS
CollectoT·Emitter Breakdown Voltage
lic = 50 mAde, IB = 01
BVCEO
Coliector·Emitter Breakdown Voltage
IiC = 50 mAde, VBe = 01
BVCES
Emitter·Base Breakdown Voltage
liE = 5.0 mAde, IC = 01
BVEBO
Collector Cutoff Current
(VCE = 28 Vde, VBE = 0, TC = +550 CI
ICES
ON CHARACTERISTICS
DC Current Gain
(lC = 0.5 Ade, VCE = 5.0 Vdel
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 0.5 Ade, VCE = 15 Vde, 1= 50 MHzl
IT
Output Capacitance
IVCB = 28 Vde, IE = 0, 1= 1.0 MHzl
Cob
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1)
IPout = 10 W(PEPI, IC = 470 mAde Max, VCC = 28 Vde,
11 = 30 MHz, 12 = 30.001 MHzl
GpE
Intermodulation Distortion Ratio (Figure 1)
IPout = 10 W(PEP!. IC = 470 mAde Max, VCC = 28 Vde,
11 = 30 MHz, 12 = 30.001 MHzl
IMD
Collector Efficiency
IPout = 10 WIPEPI, IC = 470 mAde Max, VCC = 28 Vde,
11 = 30 MHz, 12 = 30.001 MHz 1
1/
*lndicatesJEDEC Registered Data.
FIGURE 1 - 30 MHz TEST CIRCUIT
R4
o
,
t
BIAS
o5V
dc
~--'lM_
_"
"
-
-
"
"
'
-
-
"
,
,
-
-
-
,
+
01 C6 C7
L5
Min
35
65
4.0
-
50
-
12
-
38
Max
-
-
-
10
-
40
-
-30
-
rC5
~_' T T T '----.----JII----+-+---,(
Unit
Vde
Vdc
Vde
mAde
MHz
pF
dB
dB
%
Cl
C2,C3,C4
C5 '
C6,C9
C7
C8
01
L1
80 - 480 pF
ARea 466 or equivalent
170 - 780 pF ARea 469 or equivalent
O.lI'F
O.OlI'F
500l'F
TANTALUM or equiva<lent
2000 pF.
UNELCO or equivalent
lN4001
4 Turns, #18 AWG, 1/2" 1.0., 1/4" Long (O.1IJH)
L2 5 Turns, #18 AWG, 1/4" 1.0.,5/16" Long (O.13 ,uH)
L3 10l'H
L4 1.01'H
L5 RFC VK200 FERROXCUBE
Rl lQOHMS 1/2WALLENBRADLEYorequlvalent
R2,R3
1.5 OHMS 1/2 WALLEN BRADLEY or equivalent
R4 50 OHMS 1/2 W ALLEN BRADLEY or equivalent
ADJUST BIAS FOR ICO = 10 mA
2-580


Part Number 2N6370
Description NPN SILICON RF POWER TRANSISTOR
Maker ETC
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2N6370 Datasheet PDF






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