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2N6370 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
designed primarily as a driver for high'power linear amplifier stages operating from 2.0 to 30 MHz with a 28·Volt supply.
• Power Output @ 28 Vdc, 30 MHz 10 W (PEP)
• Intermodulation Distortion at Rated Power OutputIMD ~ -30 dB (Max)
10 W (PEP) - 30 MHz
RF POWER TRANSISTOR NPN SILICON
"MAXIMUM RATINGS
Ratina Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device DissipatIOn @TC""250C
Derate above 25°C Storage Temperature Range
* Indicates JEDEC Registered Data
Symbol VeEO VCRn VEBO
Ie
Po
Tstg
Value 35 65 4.0 1.5 20
0.
2N6370 Datasheet
