* high breakdown voltage, low transfer capacitance, and tetrode configuration for a broad range of applications. CASE 20 TO-72 O2 o STYLE4 PIN 1. SOURCE 2. GATE 10 0 3 3. DRAIN o 4. GATE2- 4 ~~~~TRATE AND MAXIMUM RATINGS Rating Symbol Value Unit Reverse Gate-Source Voltage Gate 1 Gate 2
3N125
ETC
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N-channel transistor.
3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.
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