BUV20,BUV21,BUV22,BUV23,BUV24
NPN Silicon Low Frequency High Power Switching Transistor
Features:
1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability.
2. Good Switching Characteristic.
3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611
4. Use for Low-speed switch,low frequency power amplify,power adjustment.
5. Quality Class: JP, JT, JCT, GS, G, G+
TECHNICAL DATA:
(Ta = 25°C )
Parameter name
Total Dissipation (Tc=25°C)
Symbols Unit
Ptot W
BUV20
BUV21
Specifications
BUV22
250
BUV23
BUV24
Max. Collector Current
ICM A
50
40
40
30
20
Junction Temperature
Tjm °C
175
Collector-Base Breakdown
V(BR)CBO V
Voltage
≥160
≥250
≥300
≥400
≥450
Collector-Emitter Breakdown
V(BR)CEO V
Voltage
Emitter-Base Breakdown
Voltage
V(BR)EBO V
≥125
≥200
≥250
IC=10mA
≥7
IE=1mA
≥325
≥400
Collector- Emitter IC= VCE(sat) V ≤1.2 50A ≤1.5 25A ≤1.5 20A ≤0.8 8A ≤0.6 6A
Saturation Voltage Drop IB=
5A 3A 2.5A 1.6A 1.2A
Collector-Emitter Laekage
Current
ICEO mA
VCE=100V VCE=160V
≤3.0
VCE=200V
VCE=250V VCE=300V
Emitter-Base Laekage Current IEBO mA
≤1.0 (VEB=7V)
DC Current Gain
VCE=, IC=
Transition frequency
hFE
2V, 25A
fT MHz
20~60
15~60
2V, 12A
4V, 10A
4V, 8A
≥8 (VCE= 15V, IC=2A,f=4MHz)
4V, 6A
Rise Time
VCE= tr us ≤1.5 30V ≤1.2 100V ≤1.3 100V ≤0.8 100V ≤1.6 120V
Storage Time
Fall Time
IC= ts us ≤1.2 50A, ≤1.8 25A ≤2.5 20A ≤2.5 16A ≤2.3 12A
IB1= 5A 3A 2.5A 3.2A 2.4A
IB2= tf us ≤0.3 -5A ≤0.4 -3A ≤0.5 -2.5A ≤1.0 -3.2A ≤1.4 -2.4A
Outline and Dimensions:
Contact: Jandy Lei
Tel.: 1399173078共2
QQ: 1142478250
47
sxqlljd@hotmail.com
