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BUV21 Datasheet PDF

Unknown Manufacturer BUV21

NPN Silicon Low Frequency High Power Switching Transistor

Part No. BUV21
Datasheet BUV21 Download
Manufacturer Unknown Manufacturer
Description NPN Silicon Low Frequency High Power Switching Transistor
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BUV21 datasheet page 1 preview

FEATURES

: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: (Ta = 25°C ) Parameter name Total Dissipation (Tc=25°C) Symbols Unit Ptot W BUV20 BUV21 Specifications BUV22 250 BUV23 BUV24 Max. Collector Current ICM A 50 40 40 30 20 Junction Temperature Tjm °C 175 Collector-Base Breakdown V(BR)CBO V Voltage ≥160 ≥250 ≥300 ≥400 ≥450 Collector-Emitter Breakdown V(BR)CEO V Voltage Emitter-Base Breakdown Voltage V(BR)EBO V ≥125 ≥200 ≥250 IC=10mA ≥7 IE=1mA ≥325 ≥400 Collector- Emitter IC= VCE(sat) V ≤1.2 50A ≤1.5 25A ≤1.5 20A ≤0.8 8A ≤0.6 6A Saturation Voltage Drop IB= 5A