EN29F040 - 4 Megabit (512K x 8-bit) Flash Memory

Product Overview

Part number	EN29F040
Manufacturer	ETC
File Size	223.38 KB
Description	4 Megabit (512K x 8-bit) Flash Memory
Datasheet	EN29F040 Datasheet
Additional preview pages of the EN29F040 datasheet.

The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory.

5.0V operation for read/write/erase operations.
Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns.
Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.5s typical.
JED.

📁 Similar Datasheet

EN29F040A - 4 Megabit (512K x 8-bit) Flash Memory (EON)
EN29F010 - 1 Megabit (128K x 8-bit) 5V Flash Memory (Eon Silicon Solution)
EN29F080 - 8 Megabit (1024K x 8-bit) Flash Memory (EON)
EN29F512 - 512 Kbit (64K x 8-bit) 5V Flash Memory (Eon Silicon Solution)
EN2997Y - connectors (HCC Industries)
EN2997YE - connectors (HCC Industries)
EN29A0QI - 10A Power Module (Intel)
EN29GL064 - 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory (Eon Silicon Solution)

Other Datasheets by ETC

Published: Mar 30, 2005 |