EN29F040 memory equivalent, 4 megabit (512k x 8-bit) flash memory.
* 5.0V operation for read/write/erase operations
* Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns
* Sector Architecture: 8 uniform sectors of 64Kbytes eac.
The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in .
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