* IXYS advanced low Qg process
* International standard packages
* Low gate charge and capacitance - easier to drive - faster switching
* Low RDS (on)
* Unclamped Inductive Switching (UIS) rated
* Molding epoxies meet UL 94 V-0 flammability classificat
IXFT40N30Q Datasheet (52.16 KB)
IXFT40N30Q
ETC
52.16 KB
Power mosfet.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 40N30Q IXFT 40N30Q VDSS ID25 RDS(on) trr = 30.
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