MEM4X16E43VTW-5 dram equivalent, 4 meg x 16 edo dram.
* Single +3.3V ±0.3V power supply
* Industry-standard x16 pinout, timing, functions, and package
* 12 row, 10 column addresses (4) 13 row, 9 column addresses .
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memor.
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