F59D4G81A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory

Elite Semiconductor

The F59D4G81A by Elite Semiconductor is a 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory. Below is the official datasheet preview.

Datasheet Details

Part number	F59D4G81A
Manufacturer	Elite Semiconductor
File Size	1.54 MB
Description	4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
Datasheet	F59D4G81A-EliteSemiconductor.pdf
Additional preview pages of the F59D4G81A datasheet.

The device is a 512Mx8bit with spare 16Mx8bit capacity (or 256Mx16bit with spare 8Mx16bit capacity).

Voltage Supply: 1.8V (1.7V ~ 1.95V).
Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit.
Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word.
Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (.

📁 F59D4G81A Similar Datasheet

F59D4G81CA-45BG2L - 4 Gbit (512M x 8) 1.8V NAND Flash Memory (ESMT)
F59D4G81KA - 4-Gbit 1.8V NAND Flash Memory (ESMT)
F59D4G81XB - 1.8V NAND Flash Memory (ESMT)
F59D1G161LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
F59D1G161LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
F59D1G161MA-45BG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
F59D1G161MA-45TG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
F59D1G161MB - 1.8V NAND Flash Memory (ESMT)

Other Datasheets by Elite Semiconductor

F59D4G161A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D2G161A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
F59D2G81A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Published: Feb 16, 2016 |