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EBE41AF4A1QA Datasheet 4GB VLP Registered DDR2 SDRAM DIMM

Manufacturer: Elpida Memory

Overview: PRELIMINARY DATA SHEET www.DataSheet4U.com 4GB VLP Registered DDR2 SDRAM DIMM EBE41AF4A1QA (512M words × 72 bits, 2 Ranks) Specifications • Density: 4GB • Organization  512M words × 72 bits, 2 ranks • Mounting 18 pieces of 2G bits DDR2 SDRAM with DDP (FBGA)  DDP: 2 pieces of 1Gb chips sealed in one package • Package: 240-pin very low profile registered dual in line memory module (VLP RDIMM)  PCB height: 18.3mm  Lead pitch: 1.0mm  Lead-free (RoHS compliant) • Power supply: VDD = 1.8V ± 0.1V • Data rate: 667Mbps (max.) • Eight internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms  Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.

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Datasheet Details

Part number EBE41AF4A1QA
Manufacturer Elpida Memory
File Size 267.53 KB
Description 4GB VLP Registered DDR2 SDRAM DIMM
Download EBE41AF4A1QA Download (PDF)

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture.
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver.
  • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transi.

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