Datasheet Summary
DATA SHEET
512M bits DDR2 SDRAM
EDE5104ABSE (128M words × 4 bits) EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits)
Description
The EDE5104ABSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108ABSE is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks. They are packaged in 64-ball FBGA (µBGA) package. The EDE5116ABSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package.
Features
- Power supply: VDD, VDDQ = 1.8V ± 0.1V
- Double-data-rate architecture: two data transfers per clock cycle
- Bi-directional, differential data strobe (DQS and /DQS) is...