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EDE5116ABSE - 512M bits DDR2 SDRAM

Download the EDE5116ABSE datasheet PDF. This datasheet also covers the EDE5108ABSE variant, as both devices belong to the same 512m bits ddr2 sdram family and are provided as variant models within a single manufacturer datasheet.

Description

The EDE5104ABSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks.

The EDE5108ABSE is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks.

They are packaged in 64-ball FBGA (µBGA) package.

Features

  • Power supply: VDD, VDDQ = 1.8V ± 0.1V.
  • Double-data-rate architecture: two data transfers per clock cycle.
  • Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver.
  • DQS is edge aligned with data for READs: centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transitions.
  • Commands entered on e.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EDE5108ABSE_ElpidaMemory.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EDE5116ABSE
Manufacturer Elpida Memory
File Size 697.92 KB
Description 512M bits DDR2 SDRAM
Datasheet download datasheet EDE5116ABSE Datasheet

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Other Datasheets by Elpida Memory

Part Number Description
EDE5116GBSA 512M bits DDR-II SDRAM
EDE5104ABSE 512M bits DDR2 SDRAM
EDE5104AESK (EDE510xAESK) 512M bits DDR2 SDRAM
EDE5104AGSE (EDE510xAGSE) 512M bits DDR2 SDRAM
EDE5104GBSA 512M bits DDR-II SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET 512M bits DDR2 SDRAM EDE5104ABSE (128M words × 4 bits) EDE5108ABSE (64M words × 8 bits) EDE5116ABSE (32M words × 16 bits) Description The EDE5104ABSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108ABSE is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks. They are packaged in 64-ball FBGA (µBGA) package. The EDE5116ABSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V ± 0.
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