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Ericsson

PTB20245 Datasheet Preview

PTB20245 Datasheet

35 Watts/ 2.1-2.2 GHz Wide-Band CDMA Power Transistor

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PTB 20245
35 Watts, 2.1–2.2 GHz
Wide-Band CDMA Power Transistor
Description
The 20245 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band.
Rated at 35 watts minimum output power for PEP applications, it is
specifically intended for operation as a final or driver stage in Wide
CDMA or TDMA systems. Ion implantation, nitride surface passivation
and gold metallization ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
60
50
40
30
20
10
0
0
VCC = 26 V
ICQ = 100 mA
f = 2000 MHz
2 4 6 8 10 12
Input Power (Watts)
• 35 Watts, 2.1–2.2 GHz
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated
20245LOT CODE
Package 20223
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
55
55
3.5
7.7
200
1.2
–40 to +150
0.85
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1




Ericsson

PTB20245 Datasheet Preview

PTB20245 Datasheet

35 Watts/ 2.1-2.2 GHz Wide-Band CDMA Power Transistor

No Preview Available !

PTB 20245
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
VBE = 0 V, IC = 20 mA
IB = 0 A, IC = 20 mA, RBE = 22
IC = 0 A, IE = 5 mA
VCE = 10 V, IC = 1.5 A
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, Pout = 10 W, ICQ = 85 mA, f = 2.2 GHz)
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 85 mA, f = 2.2 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 35 W, ICQ = 85 mA, f = 2.2 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 17.5 W, ICQ = 85 mA
f = 2.2 GHz—all phase angles at frequency of test)
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
12 60
Output Power (W)
55
11
50
10
VCC = 26 V
9 ICQ = 250 mA
8 Gain (dB)
Efficiency (%)
45
40
35
30
25
7
2050
2100
2150
2200
20
2250
Frequency (MHz)
e
Symbol
V(BR)CES
V(BR)CER
V(BR)EBO
hFE
Min
55
55
3.5
30
Typ
4.0
40
Max
Units
Volts
Volts
Volts
Symbol Min
Gpe 7.5
P–1dB 35.0
ηC
Ψ
Typ Max Units
8.5 —
dB
— — Watts
40 —
%
— 5:1
Broadband Test Fixture Performance
10 60
Gain (dB)
8
6
4
Efficiency (%)
50
40
VCC = 26 V
ICQ = 85 mA
Pout = 35 W
- 350
-1250
Return Loss (dB) -2150
2
2100
2120 2140 2160 2180
Frequency (MHz)
-305
2200
4/3/98
2


Part Number PTB20245
Description 35 Watts/ 2.1-2.2 GHz Wide-Band CDMA Power Transistor
Maker Ericsson
Total Page 5 Pages
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