EM68932DVKB Description
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EM68932DVKB Key Features
- CAS Latency: 2, or 3
- Burst length: 2, 4, or 8
- Burst Type: Sequential & Interleaved
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature pensated Self Refresh)
- DS (Drive Strength)
- Individual byte writes mask control
- DM Write Latency = 0
- Precharge Standby Current = 100 µA
- Self Refresh Current = 200 µA