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EM68B32DVKA - 16M x 32 Mobile DDR Synchronous DRAM

Features

  • Fast clock rate: 166/133 MHz.
  • Differential Clock CK & CK.
  • Bi-directional DQS.
  • Four internal banks, 4M x 32-bit for each bank.
  • Edge-aligned with read data, centered in write data.
  • Programmable Mode and Extended Mode Registers - CAS Latency: 2, or 3 - Burst length: 2, 4, 8, or 16 - Burst Type: Sequential & Interleaved - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength).
  • Individu.

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Datasheet Details

Part number EM68B32DVKA
Manufacturer Etron Technology
File Size 319.39 KB
Description 16M x 32 Mobile DDR Synchronous DRAM
Datasheet download datasheet EM68B32DVKA Datasheet
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Full PDF Text Transcription

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EtronTech EM68B32DVKA 16M x 32 Mobile DDR Synchronous DRAM (SDRAM) Etron Confidential Advanced (Rev. 1.0 Mar. /2009) Features • Fast clock rate: 166/133 MHz • Differential Clock CK & CK • Bi-directional DQS • Four internal banks, 4M x 32-bit for each bank • Edge-aligned with read data, centered in write data • Programmable Mode and Extended Mode Registers - CAS Latency: 2, or 3 - Burst length: 2, 4, 8, or 16 - Burst Type: Sequential & Interleaved - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength) • Individual byte writes mask control • DM Write Latency = 0 • Precharge Standby Current = 300 µA • Self Refresh Current = 700 µA • Deep power-down Current = 10 µA max.
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