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Etron Technology

EM68C16CWQE Datasheet Preview

EM68C16CWQE Datasheet

64M x 16 bit DDRII Synchronous DRAM

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EtronTech
EM68C16CWQE
64M x 16 bit DDRII Synchronous DRAM (SDRAM)
Advance (Rev. 1.6, May /2016)
Features
JEDEC Standard Compliant
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Power supplies: VDD & VDDQ = +1.8V 0.1V
Operating temperature: TC = 0~85°C
Supports JEDEC clock jitter specification
Fully synchronous operation
Fast clock rate: 333/400/533 MHz
Differential Clock, CK & CK#
Bidirectional single/differential data strobe
- DQS & DQS#
8 internal banks for concurrent operation
4-bit prefetch architecture
Internal pipeline architecture
Precharge & active power down
Programmable Mode & Extended Mode registers
Posted CAS# additive latency (AL): 0, 1, 2, 3, 4, 5, 6
WRITE latency = READ latency - 1 tCK
Burst lengths: 4 or 8
Burst type: Sequential / Interleave
DLL enable/disable
Off-Chip Driver (OCD)
- Impedance Adjustment
- Adjustable data-output drive strength
On-die termination (ODT)
RoHS compliant
Auto Refresh and Self Refresh
8192 refresh cycles / 64ms
84-ball 8 x 12.5 x 1.2mm (max) FBGA package
- Pb and Halogen Free
Overview
The EM68C16C is a high-speed CMOS Double-
Data-Rate-Two (DDR2), synchronous dynamic random
- access memory (SDRAM) containing 1024 Mbits in a
16-bit wide data I/Os. It is internally configured as a 8-
bank DRAM, 8 banks x 8Mb addresses x 16 I/Os. The
device is designed to comply with DDR2 DRAM key
features such as posted CAS# with additive latency,
Write latency = Read latency -1, Off-Chip Driver (OCD)
impedance adjustment, and On Die Termination(ODT).
All of the control and address inputs are synchronized
with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential clocks
(CK rising and CK# falling). All I/Os are synchronized
with a pair of bidirectional strobes (DQS and DQS#) in
a source synchronous fashion. The address bus is used
to convey row, column, and bank address information
in RAS #, CAS# multiplexing style. Accesses begin with
the registration of a Bank Activate command, and then
it is followed by a Read or Write command. Read and
write accesses to the DDR2 SDRAM are 4 or 8-bit burst
oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence. Operating the eight memory
banks in an interleaved fashion allows random access
operation to occur at a higher rate than is possible with
standard DRAMs. An auto precharge function may be
enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence. A sequential
and gapless data rate is possible depending on burst
length, CAS latency, and speed grade of the device.
Table 1. Ordering Information
Part Number
Clock Frequency Data Rate
EM68C16CWQE-18H
533MHz
1066Mbps/pin
EM68C16CWQE-25H
400MHz
800Mbps/pin
EM68C16CWQE-3H
333MHz
667Mbps/pin
WQ: indicates 8 x 12.5 x 1.2mm FBGA Package
E: indicates Generation Code
H: indicates Pb and Halogen Free
Power Supply
VDD 1.8V, VDDQ 1.8V
VDD 1.8V, VDDQ 1.8V
VDD 1.8V, VDDQ 1.8V
Package
FBGA
FBGA
FBGA
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.




Etron Technology

EM68C16CWQE Datasheet Preview

EM68C16CWQE Datasheet

64M x 16 bit DDRII Synchronous DRAM

No Preview Available !

EtronTech
Table 2. Speed Grade Information
Speed Grade
Clock Frequency
DDR2-1066
DDR2-800
533MHz
400MHz
DDR2-667
333MHz
CAS Latency
7
5
5
EM68C16CWQE
tRCD (ns)
13.125
12.5
15
tRP (ns)
13.125
12.5
15
Figure 1. Ball Assignment (FBGA Top View)
123
A VDD NC VSS
789
VSSQ UDQS# VDDQ
B DQ14 VSSQ UDM
C VDDQ DQ9 VDDQ
UDQS.
VDDQ
VSSQ
DQ8
DQ15
VDDQ
D DQ12 VSSQ DQ11
DQ10 VSSQ DQ13
E VDD NC VSS
VSSQ LDQS# VDDQ
F DQ6 VSSQ LDM
LDQS VSSQ DQ7
G VDDQ DQ1 VDDQ
VDDQ DQ0 VDDQ
H DQ4 VSSQ DQ3
DQ2 VSSQ DQ5
J VDDL VREF VSS
VSSDL CK
VDD
K
CKE
WE#
RAS# CK#
ODT
L BA2
BA0
BA1
CAS# CS#
M A10 A1
A2 A0 VDD
N VSS
A3
A5
A6 A4
P A7 A9
A11 A8 VSS
R VDD
A12
NC
NC NC
Rev. 1.6
2
May /2016


Part Number EM68C16CWQE
Description 64M x 16 bit DDRII Synchronous DRAM
Maker Etron Technology
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