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FLL200IB-3 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET

Download the FLL200IB-3 datasheet PDF. This datasheet also covers the FLL200IB-1 variant, as both devices belong to the same (fll200ib-1/-2/-3) l-band medium & high power gaas fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

Key Features

  • High Output Power: P1dB = 42.5dBm (Typ. ) High Gain: G1dB = 13.0dB (Typ. )@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ. ) Proven Reliability Hermetically Sealed Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FLL200IB-1_EudynaDevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FLL200IB-3
Manufacturer Eudyna Devices
File Size 183.22 KB
Description (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
Datasheet download datasheet FLL200IB-3 Datasheet

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Other Datasheets by Eudyna Devices

Part Number Description
FLL200IB-1 (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
FLL200IB-2 (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
FLL21E004ME High Voltage - High Power GaAs FET
FLL21E010MK High Voltage - High Power GaAs FET
FLL21E040IK High Voltage - High Power GaAs FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.