c-band internally matched fet.
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* High Output Power: P1dB = 41.5dBm (Typ.) U
* High Gain: G1dB = 10.0dB (Typ.) 4 t
* High PAE: ηadd = 37% (Typ.) e = 30.5dBm
* Low IM3 = -46dBc@Po e
D . The FLM5964-12F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system.
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Ch.
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