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FLM5964-12F Datasheet Preview

FLM5964-12F Datasheet

C-Band Internally Matched FET

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FLM5964-12F
omFEATURES
C-Band Internally Matched FET
.c• High Output Power: P1dB = 41.5dBm (Typ.)
t4U• High Gain: G1dB = 10.0dB (Typ.)
e• High PAE: ηadd = 37% (Typ.)
e• Low IM3 = -46dBc@Po = 30.5dBm
h• Broad Band: 5.9 ~ 6.4GHz
S• Impedance Matched Zin/Zout = 50
ta• Hermetically Sealed Package
.DaDESCRIPTION
The FLM5964-12F is a power GaAs FET that is internally matched for
wstandard communication bands to provide optimum power and gain in a
w50 ohm system.
w mEudynas stringent Quality Assurance Program assures the highest
reliability and consistent performance.
oABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
.cItem
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
UGate-Source Voltage
VGS
-5 V
t4Total Power Dissipation
PT Tc = 25°C
57.6 W
eStorage Temperature
Tstg
-65 to +175
°C
eChannel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
h1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50.
SELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
taItem
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
aSaturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 5000 7500
mA
Transconductance
gm VDS = 5V, IDS = 3250mA - 5000 -
mS
.DPinch-off Voltage
Vp VDS = 5V, IDS = 250mA -0.5 -1.5 -3.0
V
wGate Source Breakdown Voltage VGSO IGS = -250µA
Output Power at 1dB G.C.P.
P1dB
-5.0 -
40.5 41.5
-
-
V
dBm
wPower Gain at 1dB G.C.P.
mDrain Current
w .coPower-added Efficiency
G1dB
Idsr
ηadd
VDS =10V,
IDS = 0.65IDSS (Typ.),
f = 5.9 ~ 6.4 GHz,
ZS=ZL= 50 ohm
9.0 10.0 -
- 3250 3800
- 37 -
dB
mA
%
UGain Flatness
G
- - ±0.6
dB
et43rd Order Intermodulation
heDistortion
f = 6.4 GHz, f = 10 MHz
IM3 2-Tone Test
Pout = 30.5dBm S.C.L.
-44 -46
-
dBc
SThermal Resistance
Rth Channel to Case
- 2.3 2.6
°C/W
ataChannel Temperature Rise
Tch 10V x Idsr x Rth
- - 80
°C
www.DCASE STYLE: IK
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 2004
1




Eudyna Devices

FLM5964-12F Datasheet Preview

FLM5964-12F Datasheet

C-Band Internally Matched FET

No Preview Available !

FLM5964-12F
C-Band Internally Matched FET
POWER DERATING CURVE
60
45
30
15
0 50 100 150 200
Case Temperature (°C)
OUTPUT POWER & IM3 vs. INPUT POWER
37
VDS=10V
f1 = 6.4 GHz
35 f2 = 6.41 GHz
2-tone test
33
31
29
27
25
23
21
Pout
IM3
-20
-25
-30
-35
-40
-45
-50
-55
15 17 19 21 23 25 27
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
44
VDS=10V
P1dB
43
42
41
40
39
38
37
Pin=32.5dBm
30.5dBm
28.5dBm
26.5dBm
5.9 6.0 6.1 6.2 6.3 6.4
Frequency (GHz)
OUTPUT POWER vs. INPUT POWER
44
42
VDS=10V
f = 6.15 GHz
40
38
Pout
50
40
36 30
ηadd
34 20
32 10
30 0
20 22 24 26 28 30 32
Input Power (dBm)
2


Part Number FLM5964-12F
Description C-Band Internally Matched FET
Maker Eudyna Devices
Total Page 4 Pages
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