w w a D . w S a t e e h U 4 t m o .c w w .
Fujitsu
2
FLM5964-12F - C-Band Internally Matched FET
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
SUMITOMO
2
FLM5964-12F-001 - C-Band Internally Matched FET
FLM5964-12F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=41.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=37%(Typ..
Eudyna Devices
1
FLM5964-12F - C-Band Internally Matched FET
w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 41.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =.
SUMITOMO
1
FLM5964-12F - C-Band Internally Matched FET
FLM5964-12F FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46d.