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ON Semiconductor

NE5532 - Internally Compensated Dual Low Noise Operational Amplifier

NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op.
Rating: 2 ★★ (87 votes)
Philips

NE5532 - Internally-compensated dual low noise operational amplifier

INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept.
Rating: 2 ★★ (75 votes)
ON Semiconductor

NE5532A - Internally Compensated Dual Low Noise Operational Amplifier

NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op.
Rating: 2 ★★ (55 votes)
Philips

NE5532A - Internally-compensated dual low noise operational amplifier

INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept.
Rating: 2 ★★ (54 votes)
ST Microelectronics

GB10NB37LZ - internally clamped IGBT

® STGB10NB37LZ N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB10NB37LZ s s s s s s V CES CLAMPED V CE(s at) < 1.8 V IC 1.
Rating: 1 (37 votes)
NXP

5532 - Internally Compensated Dual Low Noise Operational Amplifier

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Rating: 1 (26 votes)
Fairchild Semiconductor

UA1458 - Dual Internally Compensated Operational Amplifiers

www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com Da.
Rating: 1 (25 votes)
STMicroelectronics

GD18N40LZ - Automotive-grade 390V internally clamped IGBT

7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.
Rating: 1 (22 votes)
Motorola

MC1436 - Internally Compensated Operational Amplifier

Order this document by MC1436/D MC1436, C High Voltage, Internally Compensated Operational Amplifiers The MC1436, C was designed for use as a summin.
Rating: 1 (20 votes)
LRC

LR358 - High gain and internally frequency compensated operational amplifiers

LESHAN RADIO COMPANY, LTD. General Description The LR358/LR358D consists of two independent,high gain and internally frequency compensated operationa.
Rating: 1 (16 votes)
SUMITOMO

FLM1011-3F - X / Ku-Band Internally Matched FET

FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: .
Rating: 1 (14 votes)
Teccor Electronics

Q2015LT - Internally Triggered Triacs (4 A to 15 A)

U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q.
Rating: 1 (12 votes)
STMicroelectronics

GP18N40LZ - Automotive-grade 390V internally clamped IGBT

7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.
Rating: 1 (12 votes)
Excelics Semiconductor

EIC1314-12 - Internally Matched Power FET

www.DataSheet4U.com EIC1314-12 ISSUED 10/17/2008 13.75-14.50 GHz 12-Watt Internally Matched Power FET Excelics EIC1314-12 .827±.010 .669 .120 MIN F.
Rating: 1 (11 votes)
Analog Devices

AD534 - Internally Trimmed Precision IC Multiplier

Data Sheet FEATURES Pretrimmed to ±0.25% maximum 4-quadrant error (AD534L) All inputs (X, Y, and Z) differential, high impedance for [(X1 − X2)(Y1 − Y.
Rating: 1 (10 votes)
Teccor Electronics

Q2004LT - Internally Triggered Triacs (4 A to 15 A)

U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q.
Rating: 1 (9 votes)
Fairchild

UA1458C - DUAL INTERNALLY-COM PENSATED OPERATIONAL AMPLIFIER

~A1458.~A1458C.~A1558 DUAL INTERNALLY-COM PENSATED OPERATIONAL AMPLIFIER FAIRCHILD LINEAR INTEGRATED CIRCUITS GENERAL DESCRIPTION - The I'A1458h,A155.
Rating: 1 (9 votes)
SUMITOMO

FLM1011-4F - X / Ku-Band Internally Matched FET

FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.0dBm (Typ.) • High Gain: G1dB = 7.0dB (Typ.) • High PAE: hadd = 2.
Rating: 1 (9 votes)
SUMITOMO

FLM1011-6F - X / Ku-Band Internally Matched FET

FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: .
Rating: 1 (9 votes)
STMicroelectronics

GB18N40LZ - Automotive-grade 390V internally clamped IGBT

7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.
Rating: 1 (9 votes)
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