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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q

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U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q

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U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q

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U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q

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NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op

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NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op

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Order this document by MC1436/D MC1436, C High Voltage, Internally Compensated Operational Amplifiers The MC1436, C was designed for use as a summin

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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LESHAN RADIO COMPANY, LTD. General Description The LR358/LR358D consists of two independent,high gain and internally frequency compensated operationa

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FLM6472-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm (Typ.) • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 36% (

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ELM1314-30F/001 Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=44.5dBm(typ.) •High Gain: G1dB=5.5dB(typ.) •High PAE: ηadd=22%(typ.)

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FLM1213-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 6.5dB (Typ.) High PAE:

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FLM3439-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm (Typ.) • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 37%

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FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.0dBm (Typ.) • High Gain: G1dB = 7.0dB (Typ.) • High PAE: hadd = 2

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a FEATURES Pretrimmed to ؎ 1.0% (AD532K) No External Components Required Guaranteed ؎ 1.0% max 4-Quadrant Error (AD532K) Diff Inputs for (X 1 – X 2) (

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FLM5359-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broa

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