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MGFC40V4450

C band internally matched power GaAs FET

MGFC40V4450 Features

* Internally matched to 50(ohm) system

* High output power P1dB=10W (TYP.) @f=4.4

* 5.0GHz

* High power gain GLP=10.0dB (TYP.) @f=4.4

* 5.0GHz

* High power added efficiency P.A.E.=32% (TYP.) @f=4.4

* 5.0GHz

* Low distortion [item -51] IM3=-45dBc

MGFC40V4450 Datasheet (97.05 KB)

Preview of MGFC40V4450 PDF

Datasheet Details

Part number:

MGFC40V4450

Manufacturer:

Mitsubishi Electric

File Size:

97.05 KB

Description:

C band internally matched power gaas fet.

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MGFC40V4450 band internally matched power GaAs FET Mitsubishi Electric

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