MGFC40V4450 - C band internally matched power GaAs FET
MGFC40V4450 Features
* Internally matched to 50(ohm) system
* High output power P1dB=10W (TYP.) @f=4.4
* 5.0GHz
* High power gain GLP=10.0dB (TYP.) @f=4.4
* 5.0GHz
* High power added efficiency P.A.E.=32% (TYP.) @f=4.4
* 5.0GHz
* Low distortion [item -51] IM3=-45dBc
