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MGFC40V4450 - C band internally matched power GaAs FET

Datasheet Summary

Description

The MGFC40V4450 is an internally impedance-matched GaAs power FET especially designed for use in 3.7

4.2 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Internally matched to 50(ohm) system.
  • High output power P1dB=10W (TYP. ) @f=4.4.
  • 5.0GHz.
  • High power gain GLP=10.0dB (TYP. ) @f=4.4.
  • 5.0GHz.
  • High power added efficiency P. A. E. =32% (TYP. ) @f=4.4.
  • 5.0GHz.
  • Low distortion [item -51] IM3=-45dBc (Typ. ) @Po=29.0dBm S. C. L.

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Datasheet preview – MGFC40V4450

Datasheet Details

Part number MGFC40V4450
Manufacturer Mitsubishi Electric
File Size 97.05 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC40V4450 Datasheet
Additional preview pages of the MGFC40V4450 datasheet.

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< C band internally matched power GaAs FET > MGFC40V4450 4.4 – 5.0 GHz BAND / 10W DESCRIPTION The MGFC40V4450 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system • High output power P1dB=10W (TYP.) @f=4.4 – 5.0GHz • High power gain GLP=10.0dB (TYP.) @f=4.4 – 5.0GHz • High power added efficiency P.A.E.=32% (TYP.) @f=4.4 – 5.0GHz • Low distortion [item -51] IM3=-45dBc (Typ.) @Po=29.0dBm S.C.L APPLICATION • item 01 : 4.4 – 5.0 GHz band microwave high power amplifier • item 51 : 4.4 – 5.0 GHz band digital radio communication QUALITY • IG RECOMMENDED BIAS CONDITIONS • VDS=10V • ID=2.
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