gaas fet & hemt chips.
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* High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability
95
40
(Unit: µm)
DESCRIPTI.
in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna’s stringent Quality Assurance .
The FLX257XV chip is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna’s stringent Quality Assurance Program assures the highest reliability an.
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