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FLX257XV - GaAs FET & HEMT

Description

The FLX257XV chip is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency.

Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Features

  • High Output Power: P1dB = 33.5dBm(Typ. ) High Gain: G1dB = 7.5dB(Typ. ) High PAE: ηadd = 31%(Typ. ) Proven Reliability 95 40 (Unit: µm).

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Datasheet Details

Part number FLX257XV
Manufacturer Eudyna Devices
File Size 84.28 KB
Description GaAs FET & HEMT
Datasheet download datasheet FLX257XV Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FLX257XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability 95 40 (Unit: µm) DESCRIPTION The FLX257XV chip is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Rating 15 -5 Tc = 25°C 15.
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