6N135 Description
The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor....
6N135 Key Features
- High speed 1Mbit/s
- High isolation voltage between input
- Guaranteed performance from 0°C to 70°C
- Wide operating temperature range of -55°C to 100°C
- Pb free and RoHS pliant
- UL and cUL approved(No. E214129)
- VDE approved (No. 132249)
- SEMKO approved
- NEMKO approved
- DEMKO approved