EIC8596-2 Datasheet | Excelics Semiconductor

FEATURES - - - - - - - 8.50-9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 d Bm Output Power at 1d B pression 8.0 d B Power Gain at 1d B pression 30% Power Added Efficiency -46 d Bc IM3 at PO = 22.5 d Bm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH Notes: 1. 2. 3. PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 550m A Gain at 1d B pression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 550m A Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 550m A Power Added Efficiency at 1d B pression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 550m A Drain Current at 1d B pression f = 8.50-9.60GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 22.5 d Bm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 9.60GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 32.5 7.0 33.5 8.0 ±0.6 30 600 UNITS d Bm d B + 0.8 d B % 700 m A d Bc -43 -46 1000 -2.5 11 1250 -4.0 12 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 10 m A m A V o C/W Tested with 100 Ohm gate resistor. S.C.L. = Single Carrier Level. Overall Rth depends on case mounting. MAXIMUM RATING AT 25 °C 1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 21.6m A -3.6m A 32.5d Bm 175 o C -65 to +175 o C 12.5W CONTINUOUS2 10V -4V 7.2m A -1.2m A @ 3d B pression 175 o C -65 to +175 o C 12.5W Vds Vgs Igsf Igsr Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 2 Revised July 2007 .. UPDATED 07/25/2007 8.50-9.60 GHz 2-Watt Internally-Matched...