900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Excelics Semiconductor

EIC8596-2 Datasheet Preview

EIC8596-2 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED 07/25/2007
EIC8596-2
8.50-9.60 GHz 2-Watt Internally-Matched Power FET
FEATURES
8.50-9.60GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+33.5 dBm Output Power at 1dB Compression
8.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 22.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ 550mA
Gain at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ 550mA
Gain Flatness
f = 8.50-9.60GHz
VDS = 10 V, IDSQ 550mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 550mA
f = 8.50-9.60GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 8.50-9.60GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 9.60GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 10 mA
Notes:
1.
2.
3.
Tested with 100 Ohm gate resistor.
S.C.L. = Single Carrier Level.
Overall Rth depends on case mounting.
MIN
32.5
7.0
-43
MAXIMUM RATING AT 25 °C 1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
15
Vgs
Gate-Source Voltage
-5
Igsf Forward Gate Current
21.6mA
Igsr
Reverse Gate Current
-3.6mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
32.5dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation
12.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
TYP
33.5
8.0
±0.6
30
600
-46
1000
-2.5
11
MAX
+ 0.8
700
1250
-4.0
12
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
CONTINUOUS2
10V
-4V
7.2mA
-1.2mA
@ 3dB Compression
175 oC
-65 to +175 oC
12.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007




Excelics Semiconductor

EIC8596-2 Datasheet Preview

EIC8596-2 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED 07/25/2007
EIC8596-2
8.50-9.60 GHz 2-Watt Internally-Matched Power FET
PACKAGES OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
EIC8596-2 (Hermetic)
EIC8596-2NH (Non-Hermetic)
Excelics
EIC8596-2
YYWW
Excelics
EIC8596-2NH
YYWW
ALL DIMENSIONS IN INCHES
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
Caution! ESD sensitive device.
ORDERING INFORMATION
Part Number
Packages
EIC8596-2
Hermetic
EIC8596-2NH Non-Hermetic
Grade1
Industrial
Industrial
fTest (GHz)
8.50-9.60GHz
8.50-9.60GHz
P1dB (min)
32.5
32.5
IM3 (min)2
-43
-43
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in “Electrical Characteristics” table.
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the
body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised July 2007


Part Number EIC8596-2
Description Internally Matched Power FET
Maker Excelics Semiconductor
PDF Download

EIC8596-2 Datasheet PDF





Similar Datasheet

1 EIC8596-12 Internally Matched Power FET
Excelics Semiconductor
2 EIC8596-15 Internally Matched Power FET
Excelics Semiconductor
3 EIC8596-2 Internally Matched Power FET
Excelics Semiconductor
4 EIC8596-4 Internally Matched Power FET
Excelics Semiconductor
5 EIC8596-8 Internally Matched Power FET
Excelics Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy