EIC8596-8
EIC8596-8 is Internally Matched Power FET manufactured by Excelics Semiconductor.
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UPDATED 08/21/2007
8.50-9.60GHz 8-Watt Internally-Matched Power FET
Features
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- 8.50
- 9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB pression 7.5 dB Power Gain at 1dB pression 30% Power Added Efficiency -43 dBc IM3 at Po = 28.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB pression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB pression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency...
