EIC8596-2 Datasheet | Excelics Semiconductor

.. UPDATED 07/25/2007 8.50-9.60 GHz 2-Watt Internally-Matched Power FET Features - - - - - - - 8.50-9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB pression 8.0 dB Power Gain at 1dB pression 30% Power Added Efficiency -46 dBc IM3 at PO = 22.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Notes: 1. 2. 3. PARAMETERS/TEST CONDITIONS1 Output Power at 1dB pression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB pression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 550mA Power...