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EIC8596-4 - Internally Matched Power FET

General Description

The EIC8596-4 is a high power, highly linear, single stage MFET amplifier in a flange mount package.

Key Features

  • 8.50.
  • 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at Po = 25.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EIC8596-4
Manufacturer Excelics Semiconductor
File Size 207.23 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC8596-4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EIC8596-4 8.50-9.60 GHz 4-Watt Internally-Matched Power FET Issued Date: 06-07-04 FEATURES • • • • • • • • 8.50 – 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at Po = 25.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC8596-4 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.