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EIC8596-8 - Internally Matched Power FET

Key Features

  • 8.50.
  • 9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at Po = 28.5 dBm SCL 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EIC8596-8
Manufacturer Excelics Semiconductor
File Size 214.46 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC8596-8 Datasheet

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www.DataSheet4U.com EIC8596-8 UPDATED 08/21/2007 8.50-9.60GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 8.50 –9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at Po = 28.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 2200mA Drain Current at 1dB Compression f = 8.