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Excelics Semiconductor

EIC8596-8 Datasheet Preview

EIC8596-8 Datasheet

Internally Matched Power FET

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UPDATED 08/21/2007
EIC8596-8
8.50-9.60GHz 8-Watt Internally-Matched Power FET
FEATURES
8.50 –9.60GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-43 dBc IM3 at Po = 28.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 8.50-9.60GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 8.50-9.60GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 8.50-9.60GHz
Id1dB
IM3
Drain Current at 1dB Compression f = 8.50-9.60GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 9.60GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 40 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
38.5
6.5
-40
TYP
39.5
7.5
30
2200
-43
3700
-2.5
2.5
MAX
±0.6
2600
UNITS
dBm
dB
dB
%
mA
dBc
4300
-4.0
3.5
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
96mA
Igr Reverse Gate Current -19.2mA
Pin Input Power 39.0dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
43W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
28.8mA
-4.8mA
@ 3dB Compression
175C
-65C to +175C
43W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007




Excelics Semiconductor

EIC8596-8 Datasheet Preview

EIC8596-8 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED 08/21/2007
EIC8596-8
8.50-9.60GHz 8-Watt Internally-Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 2200mA
-3.0
-4.0
-5.0
-10.0
S11 and S22
Swp Max
10GHz
3.0
4.0
5.0
10.0
-0.2
-0.4
S[1,1] *
EIC8596-8
S[2,2] *
EIC8596-8
0.2
0.4
Swp Min
8GHz
20
10
0
-10
-20
-30
8
S21 and S12
DB(|S[2,1]|) *
EIC8596-8
DB(|S[1,2]|) *
EIC8596-8
8.5 9 9.5
Frequency (GHz)
10
FREQ
(GHz)
8.00
8.25
8.50
8.75
9.00
9.25
9.50
9.75
10.00
10.25
10.50
--- S11 ---
MAG
ANG
0.390
177.400
0.306
125.970
0.309
77.020
0.348
40.380
0.378
8.330
0.371
-22.220
0.334
-59.000
0.280 -109.930
0.299 -175.540
0.387
132.770
0.490
98.340
--- S21 ---
MAG
ANG
3.255
-57.380
3.195
-88.570
3.052 -116.850
2.957 -144.300
2.917 -170.590
2.884
161.430
2.897
132.320
2.793
100.510
2.528
66.690
2.112
34.290
1.672
5.950
--- S12 ---
MAG
ANG
0.105 -114.220
0.112 -145.020
0.113 -173.180
0.117
161.600
0.122
135.400
0.128
108.950
0.131
81.650
0.132
49.430
0.122
16.320
0.103
-16.260
0.081
-45.080
--- S22 ---
MAG
ANG
0.514
78.300
0.527
51.750
0.507
31.300
0.459
12.160
0.393
-8.460
0.328
-38.080
0.287
-82.820
0.327 -140.430
0.462
172.730
0.614
140.720
0.713
117.810
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised October 2007


Part Number EIC8596-8
Description Internally Matched Power FET
Maker Excelics Semiconductor
PDF Download

EIC8596-8 Datasheet PDF





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