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EID1415A1-5 Datasheet Preview

EID1415A1-5 Datasheet

14.40-15.35 GHz 5-Watt Internally-Matched Power FET

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UPDATED 07/12/2007
EID1415A1-5
14.40-15.35 GHz 5-Watt Internally-Matched Power FET
FEATURES
14.40-15.35 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1415A1-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 14.40-15.35GHz
VDS = 10 V, IDSQ 1200mA
Gain at 1dB Compression
f = 14.40-15.35GHz
VDS = 10 V, IDSQ 1200mA
Gain Flatness
f = 14.40-15.35GHz
VDS = 10 V, IDSQ 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 1200mA
f = 14.40-15.35GHz
Id1dB
Drain Current at 1dB Compression f = 14.40-15.35GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 20 mA
MIN
37.0
6.5
TYP
37.5
7.5
35
1400
2080
-2.5
4.5
MAX
UNITS
dBm
dB
±0.6 dB
%
1800 mA
2880 mA
-4.0 V
5.5 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007




Excelics Semiconductor

EID1415A1-5 Datasheet Preview

EID1415A1-5 Datasheet

14.40-15.35 GHz 5-Watt Internally-Matched Power FET

No Preview Available !

www.DataSheet4U.com
EID1415A1-5
UPDATED 07/12/2007
14.40-15.35 GHz 5-Watt Internally-Matched Power FET
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
40 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
23 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 1200mA
-3.0
-4.0
-5.0
-10.0
S11 and S22
S[1,1] *
EID1415-5
S[2,2] *
EID1415-5
Swp Max
16GHz
3.0
4.0
5.0
10.0
-0.2
0.2
20
10
0
-10
-20
S21 and S12
DB(|S[2,1]|) *
EID1415-5
DB(|S[1,2]|) *
EID1415-5
-0.4
FREQ
(GHz)
14.00
14.20
14.40
14.60
14.80
15.00
15.20
15.40
15.60
15.80
16.00
0.4
Swp Min
14GHz
-30
14
14.5 15 15.5
Frequency (GHz)
16
--- S11 ---
MAG
ANG
0.486
-82.890
0.438
-93.780
0.369 -106.050
0.285 -119.390
0.188 -137.440
0.088 -167.830
0.061
87.400
0.151
41.970
0.245
22.850
0.322
8.370
0.389
-3.480
--- S21 ---
MAG
ANG
2.134 -168.830
2.225
177.610
2.312
163.060
2.380
147.370
2.417
131.260
2.417
114.830
2.375
98.420
2.306
82.120
2.200
66.090
2.087
50.830
1.973
36.210
--- S12 ---
MAG
ANG
0.053 -178.670
0.054
167.150
0.060
151.050
0.062
136.610
0.065
120.170
0.064
102.290
0.066
87.850
0.061
69.710
0.061
55.880
0.060
40.490
0.056
25.780
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
--- S22 ---
MAG
ANG
0.469 -164.400
0.410 -177.270
0.343
167.160
0.277
144.230
0.238
113.450
0.249
79.350
0.290
52.140
0.340
32.490
0.383
17.290
0.411
4.630
0.424
-7.330
Issued Date: 04-27-04
page 2 of 4
Revised July 2007


Part Number EID1415A1-5
Description 14.40-15.35 GHz 5-Watt Internally-Matched Power FET
Maker Excelics Semiconductor
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EID1415A1-5 Datasheet PDF





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