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EID1416-12 Datasheet Preview

EID1416-12 Datasheet

14.0-16.0 GHz 12-Watt Internally Matched Power FET

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UPDATED 12/06/2006
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EID1416-12
14.0-16.0 GHz 12-Watt Internally Matched Power FET
FEATURES
14.0– 16.0GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.0 dBm Output Power at 1dB Compression
5.0 dB Power Gain at 1dB Compression
22% Power Added Efficiency
Hermetic Metal Flange Package
.827±.010 .669
Excelics
EID1416-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 14.0-16.0GHz
VDS = 10 V, IDSQ 3200mA
Gain at 1dB Compression
f = 14.0-16.0GHz
VDS = 10 V, IDSQ 3200mA
Gain Flatness
f = 14.0-16.0GHz
VDS = 10 V, IDSQ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 3200mA
f = 14.0-16.0GHz
Id1dB
Drain Current at 1dB Compression
f = 14.0-16.0GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 60 mA
RTH Thermal Resistance2
Note:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
40.0
4.0
TYP
41.0
5.0
22
4000
6000
-1.0
2.5
MAX
±1.0
5000
7500
-2.5
3.0
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
MAXIMUM RATING1,2 (Ta = 25°C)
SYMBOLS
PARAMETERS
ABSOLUTE1
VDS
VGS
Igsf
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
15V
-5V
135mA
Igsr
Reverse Gate Current
-21mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
40.0dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation
50W
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-3V
45mA
-7mA
@ 3dB Compression
175 oC
-65 to +175 oC
50W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised December 2006


Part Number EID1416-12
Description 14.0-16.0 GHz 12-Watt Internally Matched Power FET
Maker Excelics Semiconductor
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Excelics Semiconductor





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