EID1416-12 - 14.0-16.0 GHz 12-Watt Internally Matched Power FET
Excelics Semiconductor
Key Features
14.0.
16.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 22% Power Added Efficiency Hermetic Metal Flange Package
.827±.010 .669
.120 MIN
EID1416-12
YYWW
SN .120 MIN
.024 .421
.125 .508±.008 .442 .168±.010
ALL.
14.40-15.35 GHz 12-Watt Internally-Matched Power FET
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EID1416-12
UPDATED 12/06/2006
14.0-16.0 GHz 12-Watt Internally Matched Power FET
Excelics
FEATURES
• • • • • • 14.0– 16.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 22% Power Added Efficiency Hermetic Metal Flange Package
.827±.010 .669
.120 MIN
EID1416-12
YYWW
SN .120 MIN
.024 .421
.125 .508±.008 .442 .168±.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH
Note: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting.
Caution! ESD sensitive device. MIN
40.0 4.0
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 14.0-16.
EID1416-12 Datasheet