EID1416A1-8 Datasheet | Excelics Semiconductor

.. UPDATED 09/20/2007 14.0-16.0GHz 8-Watt Internally-Matched Power FET Features - - - - - - 14.0-16.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 d Bm Output Power at 1d B pression 6.0 d B Power Gain at 1d B pression 27% Power Added Efficiency 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 14.0-16.0GHz VDS = 10V, IDSQ ≈ 2200m A Gain at 1d B pression f = 14.0-16.0GHz VDS = 10V, IDSQ ≈ 2200m A Gain Flatness f = 14.0-16.0GHz VDS = 10V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression f = 14.0-16.0GHz VDS = 10V, IDSQ ≈ 2200m A Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance2 f = 14.0-16.0GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A Caution! ESD sensitive device. MIN 38.5 5.0 TYP 39.5 6.0 ±0.6 27 2800 4200 -1.2 3.5 3600 5760 -2.5 4.0 o UNITS d Bm d B d B % m A m A V C/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case...