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EID1416A1-8 - 14.0-16.0 GHz 8-Watt Internally-Matched Power FET

Key Features

  • 14.0-16.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 27% Power Added Efficiency 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EID1416A1-8
Manufacturer Excelics Semiconductor
File Size 134.83 KB
Description 14.0-16.0 GHz 8-Watt Internally-Matched Power FET
Datasheet download datasheet EID1416A1-8 Datasheet

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www.DataSheet4U.com EID1416A1-8 UPDATED 09/20/2007 14.0-16.0GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • 14.0-16.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 27% Power Added Efficiency 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.0-16.0GHz VDS = 10V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 14.0-16.0GHz VDS = 10V, IDSQ ≈ 2200mA Gain Flatness f = 14.0-16.0GHz VDS = 10V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 14.0-16.