EID1416-12 Datasheet | Excelics Semiconductor

.. UPDATED 12/06/2006 14.0-16.0 GHz 12-Watt Internally Matched Power FET Excelics Features - - - - - - 14.0- 16.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.0 d Bm Output Power at 1d B pression 5.0 d B Power Gain at 1d B pression 22% Power Added Efficiency Hermetic Metal Flange Package .827±.010 .669 .120 MIN YYWW SN .120 MIN .024 .421 .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH Note: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. Caution! ESD sensitive device. MIN 40.0 4.0 PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 14.0-16.0GHz VDS = 10 V, IDSQ ≈ 3200m A Gain at 1d B pression f = 14.0-16.0GHz VDS = 10 V, IDSQ ≈ 3200m A Gain Flatness f = 14.0-16.0GHz VDS = 10 V, IDSQ ≈ 3200m A Power Added Efficiency at 1d B pression f = 14.0-16.0GHz VDS = 10 V, IDSQ ≈ 3200m A Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance 41.0 5.0 UNITS d Bm d B ±1.0 22 4000 6000 -1.0 2.5 5000 7500 -2.5 3.0 o d B % m A m A V C/W f = 14.0-16.0GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 m A MAXIMUM RATING1,2 (Ta = 25°C) SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15V -5V 135m A -21m A 40.0d Bm o 175 C o -65 to +175 C CONTINUOUS2 10V -3V 45m A -7m A @ 3d B pression 175 o C -65 to +175 o C...