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EPA160AV Datasheet Preview

EPA160AV Datasheet

High Efficiency Heterojunction Power FET

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Excelics
EPA160A/EPA160AVwww.DataSheet4U.com
DATA SHEET
High Efficiency Heterojunction Power FET
+31.0dBm TYPICAL OUTPUT POWER
8.5dB TYPICAL POWER GAIN FOR EPA160A AND
10.0dB FOR EPA160AV AT 18GHz
0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA160AV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 40mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS
EPA160A
Chip Thickness: 75 ± 20 microns
All Dimensions In Microns
: Via Hole
No Via Hole For EPA160A
EPA160AV
MIN TYP MAX MIN TYP MAX
Output Power at 1dB Compression f=12GHz 29.0 31.0
P1dB Vds=8V, Ids=50% Idss
f=18GHz
31.0
29.0 31.0
31.0
Gain at 1dB Compression
G1dB Vds=8V, Ids=50% Idss
f=12GHz 9.5 11.5
f=18GHz
8.5
10.0 12.0
10.0
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
45
46
Idss Saturated Drain Current Vds=3V, Vgs=0V
290 480 660 290 480 660
Gm Transconductance
Vds=3V, Vgs=0V
320 500
320 500
Vp Pinch-off Voltage
Vds=3V, Ids=4.5mA
-1.0 -2.5
-1.0 -2.5
BVgd Drain Breakdown Voltage Igd=1.6mA
-11 -15
-11 -15
BVgs Source Breakdown Voltage Igs=1.6mA
-7 -14
-7 -14
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MAXIMUM RATINGS AT 25OC
30
22
UNIT
dBm
dB
%
mA
mS
V
V
V
oC/W
SYMBOLS
PARAMETERS
EPA160A
EPA160AV
ABSOLUTE1
CONTINUOUS2
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
12V
8V
12V 8V
Vgs Gate-Source Voltage
-8V
-3V
-8V
-3V
Ids Drain Current
Idss
475mA
Idss
625mA
Igsf Forward Gate Current
80mA
14mA
80mA
14mA
Pin Input Power
Tch Channel Temperature
Tstg Storage Temperature
28dBm
175oC
-65/175oC
@ 3dB
Compression
150oC
-65/150oC
28dBm
175oC
-65/175oC
@ 3dB
Compression
150oC
-65/150oC
Pt
Total Power Dissipation
4.5W
3.8W
6.0W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
5.0W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com




Excelics Semiconductor

EPA160AV Datasheet Preview

EPA160AV Datasheet

High Efficiency Heterojunction Power FET

No Preview Available !

EPA160A/EPA160AV
DATA SHEET
High Efficiency Heterojunction Power FET
www.DataSheet4U.com
EPA160A
P-1dB & PAE vs. Vds
f = 12 GHz
Ids = 50% Idss
40
38
36
34
32
30
28
26
24
4567
Drain-Source Voltage (V)
50
45
40
35
30
25
20
15
10
8
Pout & PAE vs. Pin
f = 12 GHz
Vds = 8V, Ids = 50% Idss
50
40 PAE
30
Pout
20
10
0
-5 0
5 10 15
Pin (dBm)
20
25
S-PARAMETERS
EPA160A 8V, 1/2 Idss
FREQ
(GHz)
1.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
--- S11 ---
--- S21 ---
MAG ANG MAG ANG
0.915 -119.9 14.906 114.4
0.907 -149.2 8.322 96.0
0.907 -168.1 4.370 77.6
0.908 -180.0 2.898 63.8
0.912 174.7 2.172 52.5
0.918 170.0 1.693 41.7
0.923 165.9 1.349 31.4
0.931 162.9 1.084 22.4
0.936 160.3 0.896 13.7
0.941 159.3 0.761 5.9
0.936 158.5 0.675 -2.0
--- S12 ---
MAG ANG
0.027 31.0
0.029 19.1
0.031 14.5
0.030 14.2
0.030 16.0
0.028 17.0
0.028 21.7
0.028 23.4
0.028 25.0
0.029 25.3
0.031 25.6
--- S22 --- FREQ
MAG ANG (GHz)
0.302 -128.9 21.0
0.331 -146.1 22.0
0.362 -151.0 24.0
0.411 -150.0 26.0
0.448 -152.1 28.0
0.498 -155.7 30.0
0.549 -160.3 32.0
0.601 -162.8 34.0
0.658 -166.7 36.0
0.697 -170.4 38.0
0.725 -175.6 40.0
--- S11 ---
MAG ANG
0.932 155.6
0.932 150.8
0.932 143.6
0.928 139.3
0.917 135.6
0.917 133.4
0.912 128.2
0.915 123.6
0.942 126.8
0.957 129.8
0.952 138.3
--- S21 ---
MAG ANG
0.642 -5.2
0.601 -8.9
0.526 -16.4
0.460 -23.2
0.403 -31.9
0.350 -39.1
0.294 -46.1
0.255 -50.3
0.223 -52.3
0.212 -53.8
0.205 -60.1
--- S12 ---
MAG ANG
0.035 25.7
0.035 26.0
0.040 27.1
0.043 28.0
0.049 25.7
0.051 20.1
0.048 19.9
0.048 23.0
0.048 22.2
0.055 17.0
0.055 4.9
--- S22 ---
MAG ANG
0.744 -175.4
0.747 -174.5
0.778 -175.2
0.783 -179.1
0.820 170.8
0.834 164.0
0.865 162.3
0.876 163.9
0.869 162.9
0.872 158.9
0.843 147.4
EPA160AV 8V, 1/2 Idss
FREQ
(GHz)
1.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
--- S11 ---
--- S21 ---
MAG ANG MAG ANG
0.922 -115.7 13.969 116.1
0.914 -146.8 7.872 96.1
0.917 -165.9 4.057 76.9
0.923 -176.7 2.690 63.0
0.929 -177.6 2.027 51.5
0.930 -178.2 1.596 40.1
0.936 175.2 1.273 28.3
0.941 171.3 1.025 17.7
0.950 167.4 0.833 8.1
0.953 168.3 0.695 0.3
0.955 165.1 0.597 -7.2
--- S12 ---
MAG ANG
0.027 30.9
0.031 17.2
0.030 7.9
0.029 4.3
0.027 4.6
0.025 4.2
0.023 1.8
0.021 1.5
0.021 2.2
0.022 3.2
0.022 3.0
--- S22 --- FREQ
MAG ANG (GHz)
0.271 -114.5 21.0
0.299 -134.2 22.0
0.341 -140.5 24.0
0.393 -140.1 26.0
0.430 -148.0 28.0
0.485 -157.8 30.0
0.556 -161.5 32.0
0.626 -167.2 34.0
0.688 -170.1 36.0
0.732 -176.3 38.0
0.768 -177.8 40.0
--- S11 ---
MAG ANG
0.957 163.3
0.956 162.5
0.954 159.0
0.953 158.6
0.932 153.0
0.918 146.4
0.877 145.0
0.934 144.2
0.968 144.4
0.985 146.4
0.986 146.4
--- S21 ---
MAG ANG
0.582 -11.9
0.536 -15.4
0.452 -22.5
0.384 -30.1
0.335 -37.8
0.295 -46.5
0.262 -56.0
0.229 -63.9
0.214 -69.5
0.201 -74.3
0.189 -77.5
--- S12 ---
MAG ANG
0.023 5.0
0.024 4.2
0.024 8.6
0.026 10.9
0.026 11.9
0.028 9.1
0.027 -0.3
0.024 -3.7
0.025 -6.0
0.028 -22.8
0.035 -40.3
--- S22 ---
MAG ANG
0.766 -179.4
0.786 179.1
0.821 176.3
0.844 169.1
0.880 165.4
0.899 161.7
0.949 153.2
0.896 146.3
0.916 141.6
0.952 137.4
0.952 137.2
Note: The data included 0.7 mils diameter Au bonding wires; 3 gate wires, 15 mils each; 3 drain wires, 20 mils each;
10 source wires, 7 mils each; no source wires for EPA160AV.


Part Number EPA160AV
Description High Efficiency Heterojunction Power FET
Maker Excelics Semiconductor
Total Page 2 Pages
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