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EPA160A - High Efficiency Heterojunction Power FET

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Datasheet Details

Part number EPA160A
Manufacturer Excelics Semiconductor
File Size 57.59 KB
Description High Efficiency Heterojunction Power FET
Datasheet download datasheet EPA160A Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Excelics • • • • • • • EPA160A/EPA160AV www.DataSheet4U.com DATA SHEET High Efficiency Heterojunction Power FET +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA160AV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 40mA PER BIN RANGE O Chip Thickness: 75 ± 20 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN Output Power at 1dB Compression P1dB Vds=8V, Ids=50% Idss Gain at 1dB Compression G1dB Vds=8V, Ids=50% Idss Gain at 1dB Compression PAE Idss Gm Vp BVgd BVgs Rth Vds=8V, Ids=50% Idss f=12GHz 290 320 45 480 500 -1.