EPA160A Datasheet | Excelics Semiconductor

Excelics - - - - - - - EPA160A/EPA160AV .. DATA SHEET High Efficiency Heterojunction Power FET +31.0d Bm TYPICAL OUTPUT POWER 8.5d B TYPICAL POWER GAIN FOR EPA160A AND 10.0d B FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA160AV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 40m A PER BIN RANGE Chip Thickness: 75 ± 20 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN Output Power at 1d B pression P1d B Vds=8V, Ids=50% Idss Gain at 1d B pression G1d B Vds=8V, Ids=50% Idss Gain at 1d B pression PAE Idss Gm Vp BVgd BVgs Rth Vds=8V, Ids=50% Idss f=12GHz 290 320 45 480 500 -1.0 -11 -7 -15 -14 30 -2.5 660 f=12GHz f=18GHz f=12GHz f=18GHz 9.5 29.0 : Via Hole No Via Hole For EPA160A EPA160AV MAX MIN 29.0 TYP 31.0 31.0 10.0 12.0 10.0 d B d Bm MAX UNIT TYP 31.0 31.0 11.5 8.5 46 290 320 480 500 -1.0 -11 -7 -15 -14 22 o % 660 m A m S -2.5 V V V C/W Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=4.5m A Drain Breakdown Voltage Igd=1.6m A Source Breakdown Voltage Igs=1.6m A Thermal Resistance (Au-Sn Eutectic Attach) O MAXIMUM RATINGS AT 25 C SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 8V -3V 475m A 14m A @ 3d B pression 150o C o EPA160AV ABSOLUTE1 12V -8V Idss 80m A 28d Bm 175o C o CONTINUOUS2 8V -3V 625m A 14m A @ 3d B pression 150o C Vds Vgs Ids Igsf Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation 12V -8V Idss 80m A 28d Bm 175o C -65/175 C 4.5W -65/150 C 3.8W -65/175 C 6.0W o -65/150o C 5.0W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA...