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EPA160AV - High Efficiency Heterojunction Power FET

Download the EPA160AV datasheet PDF. This datasheet also covers the EPA160A variant, as both devices belong to the same high efficiency heterojunction power fet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (EPA160A_ExcelicsSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EPA160AV
Manufacturer Excelics Semiconductor
File Size 57.59 KB
Description High Efficiency Heterojunction Power FET
Datasheet download datasheet EPA160AV Datasheet

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Other Datasheets by Excelics Semiconductor

Part Number Description
EPA160A High Efficiency Heterojunction Power FET
EPA160B High Efficiency Heterojunction Power FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Excelics • • • • • • • EPA160A/EPA160AV www.DataSheet4U.com DATA SHEET High Efficiency Heterojunction Power FET +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA160AV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 40mA PER BIN RANGE O Chip Thickness: 75 ± 20 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS PARAMETERS/TEST CONDITIONS MIN Output Power at 1dB Compression P1dB Vds=8V, Ids=50% Idss Gain at 1dB Compression G1dB Vds=8V, Ids=50% Idss Gain at 1dB Compression PAE Idss Gm Vp BVgd BVgs Rth Vds=8V, Ids=50% Idss f=12GHz 290 320 45 480 500 -1.