EPA160B Datasheet | Excelics Semiconductor

Excelics DATA SHEET - - - - - - +31.0d Bm TYPICAL OUTPUT POWER 5.5d B TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 40m A PER BIN RANGE .. High Efficiency Heterojunction Power FET 540 50 156 100 40 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1d B G1d B PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1d B pression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=4.5m A Chip Thickness: 75 ± 13 microns All Dimensions In Microns MIN 29.0 9.0 TYP 31.0 31.0 10.5 5.5 45 UNIT d Bm d B % 290 320 480 500 -1.0 660 m A m S -2.5 V V V o Drain Breakdown Voltage Igd=1.6m A Source Breakdown Voltage Igs=1.6m A Thermal Resistance (Au-Sn Eutectic Attach) -11 -7 -15 -14 33 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -3V Vgs Drain Current Idss 435m A Ids Forward Gate Current 80m A 14m A Igsf Input Power 28d Bm @3d B pression Pin o Channel Temperature 175 C 150o C Tch Storage Temperature -65/175o C -65/150o C Tstg Total Power Dissipation 4.1W 3.4W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: .excelics. DATA SHEET P-1d B & PAE vs. Vds f = 12 GHz Ids = 50% Idss Pout (d Bm) or PAE (%) 40 P-1d B (d Bm) 55 50 45 40 35 25 4 5 6 7 8 Drain-Source Voltage (V) 30 PAE (%) 35 50 40 30 20 10 0 0 5 10 15 20 25 Pin (d Bm) Pout PAE .. High...