EMB20P03V - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

General Description

P-CH BVDSS RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ -30V 20mΩ 35mΩ -36A ID @TA=25℃ -8A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS

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EMB20P03V single p-channel logic level enhancement mode field effect transistor by Excelliance MOS - Datasheet Preview

Datasheet Details

Part number	EMB20P03V
Manufacturer	Excelliance MOS
File Size	349.27 KB
Description	Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB20P03V Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMB20P03VAT	MOSFET
EMB20P03VAT-L	P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB20P03A	MOSFET
EMB20P03G	P-Channel MOSFET
EMB20P03H	MOSFET

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EMB20P03V Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: P-CH BVDSS RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ -30V 20mΩ 35mΩ -36A ID @TA=25℃ -8A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±25 Continuous Drain Current TC = 25 °C TC = 100 °C ID -36 -23 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID -8 -6 IDM -66 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 IAS -30 L = 0.1mH EAS 45 L = 0.05mH EAR 22.5 Power Dissipation TC = 25 °C TC = 100 °C PD 43.1 17.