• Part: EMB20P06A
  • Description: P-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 357.54 KB
Download EMB20P06A Datasheet PDF
Excelliance MOS
EMB20P06A
EMB20P06A is P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
Description : P-CH BVDSS -60V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 18mΩ 22mΩ -50A Single P Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage TC = 25 °C Continuous Drain Current1 TC = 100 °C TA = 25 °C Pulsed Drain Current1 Avalanche Current1 Avalanche Energy1 Repetitive Avalanche Energy2 Power Dissipation1 Power Dissipation1 TA = 70 °C L = 0.1m H L = 0.05m H TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range Tj, Tstg - 100% UIS testing in condition of VD=-30V, L=0.1m H, VG=10V, IL=35A, Rated VDS=-60V P-CH - THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RθJC...