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EMB20P03P - MOSFET

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Part number EMB20P03P
Manufacturer Excelliance MOS
File Size 199.79 KB
Description MOSFET
Datasheet download datasheet EMB20P03P Datasheet
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 20mΩ ID ‐8A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 VGS TC = 25 °C ID TC = 100 °C IDM Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 385°C / W when mounted on a 1 in2 pad of 2 oz copper. TYPICAL EMB20P03P LIMITS ±25 ‐8 ‐6 ‐32 1.47 0.
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